Gujarat Technological UniversitySummer 2025 examination

GTU 3151105 VLSI Design Summer 2025 Question Paper & PDF

B.E. · EC Engineering · Semester 5 · Subject code 3151105
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Total
70 marks
To pass
23 marks (33%)
Duration
2.5 Hours 2:30 PM – 5:00 PM
Questions
5 with internal choice
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Q.1

14 Marks
(a)
3 marks
Present device isolation techniques in fabrication process.
(b)
4 marks
Explain the MOS system under external bias.
(c)
7 marks
Describe the working of edge-triggered flip-flops with necessary diagrams.

Q.2

14 Marks
(a)
3 marks
Explain the basic principles of pass transistor circuits.
(b)
4 marks
Design 2-input OR, AND and XOR gate using CMOS.
(c)
7 marks

Present the analysis of the resistive load inverter. Derive critical voltages and noise margins.

(c)
7 marks

Analyze transmission gates (TGs) in detail. Also, describe the procedure for circuit design with TGs.

Q.3

14 Marks
(a)
3 marks
Enlist MOSFET scaling and small-geometry effects.
(b)
4 marks
Discuss synchronous dynamic circuit techniques.
(c)
7 marks
Present timing analysis of CMOS inverter.
(a)
3 marks
What is the built-in self-test (BIST)? Explain this technique in brief.
(b)
4 marks
Describe the behavior of bistable elements.
(c)
7 marks
Explain voltage bootstrapping.

Q.4

14 Marks
(a)
3 marks

Write the equations describing the current-voltage characteristics of MOSFET.

(b)
4 marks
Describe fabrication of nMOS Transistor.
(c)
7 marks

Analyze the factors behind latch-up problems. Also, explain the techniques for its prevention.

(a)
3 marks
What is the substrate bias effect? Explain its analysis.
(b)
4 marks
Discuss switching power dissipation of CMOS inverters.
(c)
7 marks
Present the analysis of on-chip clock generation and distribution techniques.

Q.5

14 Marks
(a)
3 marks
Define and explain DIBL.
(b)
4 marks
Present delay-time definitions.
(c)
7 marks
Discuss fault types and models.
(a)
3 marks
Explain controllability and observability.
(b)
4 marks

Describe the operating principle of the SR latch circuit with the necessary diagrams.

(c)
7 marks

What are the needs of FinFET devices? Explain FinFET devices in detail. Also, compare them with planar MOSFET.

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About this paper

Official Gujarat Technological University (GTU) examination paper for VLSI Design (Summer 2025, B.E. · EC Engineering, Sem 5). Features complete 70-mark regular & remedial examination pattern, official marking distribution across all 5 questions, and direct 1-click official PDF download.

Transcribed for student exam preparation from Gujarat Technological University official examination archives. Questions, syllabus guidelines, and curriculum marking schemes remain the intellectual property of Gujarat Technological University.

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