Gujarat Technological UniversityWinter 2025 examination

GTU BE01000111 Basic Electronics Engineering Winter 2025 Question Paper & PDF

B.E. · Common Engineering · Semesters 1 and 2 · Subject code BE01000111GTU also lists this paper as BE01R00111
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Total
70 marks
To pass
23 marks (33%)
Duration
2.5 Hours 2:30 PM – 5:00 PM
Questions
5 with internal choice
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Q.1

14 Marks
(a)
3 marks

A BJT has emitter current and collector current of the value 10 mA and 9.8 mA respectively, determine current gains for CB and CE configurations.

(b)
4 marks

Explain forward and reverse bias operation of a P-N junction diode with depletion region.

(c)
7 marks

Draw CB configuration using NPN transistor and discuss its input and output characteristics with ICBO, ri, ro, and current gain α.

Q.2

14 Marks
(a)
3 marks
Define knee voltage, bulk resistance and PIV for a P-N junction.
(b)
4 marks

Draw Bridge rectifier circuit and input and output waveforms. Also derive output voltages Vdc & Vrms .

(c)
7 marks
Draw circuit for voltage Doubler, Tripler & Quadrupler and explain their operation.
(c)
7 marks

Differentiate between Avalanche and Zener breakdown and discuss circuit of Zener as a voltage regulator.

Q.3

14 Marks
(a)
3 marks
Explain biased negative clipper with necessary waveforms.
(b)
4 marks
Discuss Choke input filter with its limitations.
(c)
7 marks
Discuss load line, operating point, DC & AC load lines for BJT.
(a)
3 marks
Describe positive clamper circuit with necessary waveforms.
(b)
4 marks
Describe RC filter and state ripple voltage formula.
(c)
7 marks
Discuss thermal stability of BJT with stability factors S, S’, S’’.

Q.4

14 Marks
(a)
3 marks
Explain FET as a switch.
(b)
4 marks
Draw Hybrid equivalent model of transistor for CB, CE, CC configurations.
(c)
7 marks

Explain CE amplifier with derivation of input impedance, output impedance and voltage gain in terms of h parameters.

(a)
3 marks
Explain FET as an amplifier.
(b)
4 marks
Compare CB, CE, CC amplifiers.
(c)
7 marks
Explain voltage divider bias circuit for BJT in detail.

Q.5

14 Marks
(a)
3 marks
Discuss Solar cell in detail.
(b)
4 marks
Explain Varactor diode with applications.
(c)
7 marks

Explain Drain characteristics and Transfer characteristics of JFET in detail with all related terms as Transconductance gm, drain resistance rd, and amplification factor μ.

(a)
3 marks
Describe LED with applications.
(b)
4 marks
Discuss Tunnel diode with its V/I characteristics and applications
(c)
7 marks
Explain MOSFET and draw the structure for D-MOSFET & E-MOSFET.

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About this paper

Official Gujarat Technological University (GTU) examination paper for Basic Electronics Engineering (Winter 2025, B.E. · Common Engineering, Sem 1). Features complete 70-mark regular & remedial examination pattern, official marking distribution across all 5 questions, and direct 1-click official PDF download.

Transcribed for student exam preparation from Gujarat Technological University official examination archives. Questions, syllabus guidelines, and curriculum marking schemes remain the intellectual property of Gujarat Technological University.

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